
To increase efficiency of these LDOs special attention has been given to minimising their drop-out voltage at high output current and low output voltage operation. The TCR5AM series achieve an ultra-low dropout voltage by adopting a secondary bias voltage supply (VBAT) as a reference voltage. Applying VBAT=3.3V enables a 0.6V output voltage operation with typical dropout voltages as low as 0.090V (@ IOUT=300 mA) and 0.150V (@ IOUT=500 mA). This performance makes the TCR5AM series suitable for high-current loads (such as RF or camera circuits) in battery operated designs.
The TCR5AM series includes integrated protection features such as over-current and over-temperature protection as well as under-voltage lock-out and auto output discharge functions. They come in the ultra-small DFN5B package (1.2 x 1.2; t: 0.38 mm) with 600 mW power dissipation. As the LDO can be mounted with small ceramic input and output capacitors it is suitable for high-density board assemblies.
Toshiba; www.toshiba.semicon-storage.com
