Ultra-small FemtoFET MOSFETs feature lowest on-resistance
The three N-channel and three P-channel FemtoFET MOSFETs are packaged in a land grid array (LGA) that reduces board space by up to 40% when compared to chip scale packaging (CSP). The CSD17381F4 and CSD25481F4 feature on-resistance below 100 mΩ , which is 70% lower than similar devices. All the FemtoFET MOSFETS provide electrostatic discharge (ESD) protection greater than 4,000 V human body model (HBM).
|
Part Number |
Channel |
BVdss (V) |
Vgs (V) |
Typical Rdson (mohm) |
Id @ Ta = 25°C (A) |
||
|
1.8V |
2.5V |
4.5V |
|||||
|
N |
30 |
12 |
160 |
110 |
90 |
3.1 |
|
|
N |
30 |
12 |
370 |
240 |
200 |
1.5 |
|
|
N |
12 |
8 |
310 |
170 |
140 |
2.1 |
|
|
P |
-20 |
-12 |
395 |
145 |
90 |
-2.5 |
|
|
P |
-20 |
-12 |
580 |
338 |
210 |
-1.6 |
|
|
P |
-12 |
-8 |
480 |
250 |
150 |
-2.3 |
|
Measuring 0.6 x 1.0 x 0.35 mm, the FemtoFETs carry continuous drain current values ranging from 1.5 A to 3.1 A provide more than double the performance compared to similar size devices on the market today. They cost from $0.06 (1000) for the CSD17483F4, to $0.10 for the CSD17381F4.
TI; www.ti.com
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