MENU

Ultra-small P-channel Enhancement-Mode Power MOSFETs

Ultra-small P-channel Enhancement-Mode Power MOSFETs

New Products |
By eeNews Europe



Combining fast switching, low on-resistance and cost-effectiveness, the AP2325GEU6-HF-3 is simple to use and has a low gate charge. It features a minimum Drain-Source Breakdown Voltage (BVDSS) of -20V, maximum RDS(ON) of 145 mΩ, and a maximum Continuous Drain Current (ID) at 25degC of -1.8A.

APEC; www.a-powerusa.com/docs/AP2325GEU6-3.pdf

If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News

Share:

Linked Articles
10s