Ultra thin low ESR/ESL silicon capacitors focus on decoupling applications
The new library components support the demand for lower voltage, higher current, higher frequencies in power converter and decoupling applications.
The silicon capacitors decrease the overall impedance and claim to offer the best solution for decoupling performances up to 10 GHz frequency range.
The devices, which are ideal for decoupling applications, offer low profile specificity down to 80 µm. The 3D silicon capacitors feature a capacitance density up to 250 nF/mm² with breakdown voltage (VBD) of 11 V minimum.
Delivering low leakage performance the capacitors enable low power consumption (typically < 5 nA/µF and down to < 0.2 nA/µF @ 3.2V/25°C). The devices offer high capacitance stability with respect to temperature (70 ppm/°C over the range -55°C/+200°C) or voltage (<0.1%/V).
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