UltraCMOS 60 GHz RF SOI switches in volume production
Both 60 GHz switches deliver exceptional performance in all key RF parameters and have a fast switching speed of only 8 nanoseconds. The PE42525 is ideal for test-and-measurement equipment, microwave-backhaul solutions and higher frequency switching in 5G systems. The PE426525 boasts an extended temperature range making it desirable for harsh-environment applications in industrial markets.
Supporting a wide frequency range from 9 kHz to 60 GHz, the PE42525 and PE426525 are single-pole double-throw (SPDT) RF switches. The two reflective switches deliver an incredibly fast switching speed of 8 nanoseconds and RF TRISE/TFALL time of 3 nanoseconds. Both switches have low current of 390 nanoamperes. With exceptional performance across all key RF specifications, these switches deliver high port-to-port isolation, low insertion loss, high power handling, high linearity and excellent ESD protection of 1 kV HBM.
At 50 GHz, the PE42525 and PE426525 exhibit port-to-port isolation of 37 dB and insertion loss of 1.9 dB. The PE426525 also has an extended temperature range from -55 to +125 degrees Celsius. The PE42525 and PE426525 are available as a flip-chip die with 500 microns bump pitch—the best form factor for high frequency performance as it eliminates performance variations due to wire-bond length. Production parts and evaluation kits are available now.
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