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UltraCMOS antenna switches boost performance in 4G LTE-Advanced mobile applications

UltraCMOS antenna switches boost performance in 4G LTE-Advanced mobile applications

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By eeNews Europe



The PE42128x devices support simultaneous multi-band operation of up to 14 frequency bands while delivering exceptional linearity, insertion loss performance and small size.

“Peregrine’s UltraCMOS process continues to bring innovative solutions to a highly complex and ever-increasing set of challenges in the RF front-end,” said Jim Cable, CEO of Peregrine Semiconductor. “Our vision has always been to enable the wireless industry to solve the most critical RF demands, where our technology and products not only deliver but thrive. Emerging LTE-Advanced Smartphone platforms require a unique combination of RF performance achievements that only UltraCMOS technology can bring,” he added.

The LTE-A protocol calls for carrier aggregation – or the simultaneous reception of multiple frequency bands – which improves data delivery speed to dramatically improve consumer experience. The PE42128x antenna switches are designed specifically to solve the challenges of carrier aggregation. Each of the latest MultiSwitch devices features an innovative combination of two SP7T switches in a single IC to support 14 different frequency bands including simultaneous multiband operation.

With HaRP™ technology enhancements, the PE42128x devices deliver high linearity with an IIP3 of +75 dBm, as well as extremely low insertion loss (0.35 dB at 900 MHz; and 0.45 at 1900 MHz) and high isolation (38 dB at 698-2170 MHz; and 33 dB at 2500-2690 MHz).

The switches also feature industry-leading 2fo and 3fo for LTE of less than -80 dBm at 700 MHz. High linearity and isolation performance are critical in LTE-Advanced Smartphones to ensure that radio signals don’t spill into other bands during multi-band operation.

www.psemi.com

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