University of Cambridge installs MOCVD system for LED development

University of Cambridge installs MOCVD system for LED development

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The University of Cambridge has ordered from Veeco Instruments Inc. the Propel Power Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System for GaN-on-silicon (Si) power electronics and light emitting diode (LED) research and development.
By eeNews Europe


The system will be installed at the Cambridge Centre for Gallium Nitride, which is headed by Professor Sir Colin Humphreys, located in Cambridge, England. Since 2000, Professor Humphreys has carried out studies of InGaN quantum wells used in LED development. GaN-on-silicon technology is considered a potential cost saving alternative to GaN-on-sapphire technology.

“After careful consideration, we concluded that Veeco’s Propel MOCVD system provides a distinct advantage over other systems to improve and expand our GaN-on-silicon R&D capabilities,” explained Professor Sir Colin Humphreys, Director of Research at The University of Cambridge. “Gallium nitride is the most important semiconductor material since silicon for power electronics and LEDs. The Propel PowerGaN platform enables the growth of high performance device structures in a clean and stable process environment with low particle defects.”

“The Propel PowerGaN single wafer system enables the development of highly-efficient GaN-based power electronic devices that we believe will accelerate the industry’s transition from R&D to high volume production,” said Jim Jenson, Senior Vice President, Veeco MOCVD Operations. “Since its introduction, our new Propel PowerGan system has quickly gained attention for its outstanding performance. We are very excited to have our technology recognized and adopted by such a distinguished university that is at the forefront of GaN-on-silicon development.”

Veeco’s Propel Power GaN MOCVD system is designed specifically for the power electronics industry. Featuring a single-wafer 200 mm reactor platform, capable of processing six and eight-inch wafers, the system deposits high-quality GaN films for the production of highly-efficient power electronic devices. The single-wafer reactor is based on Veeco’s leading TurboDisc design with breakthrough technology including the new IsoFlange and SymmHeat technologies that provide homogeneous laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco K465i and MaxBright systems to the Propel Power GaN MOCVD platform.

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