US scientists demo long-wavelength LED based on InGaN-on-silicon technology
RSL’s device compliments its proprietary thin-film InGaN on silicon technology for high efficiency photovoltaic applications and power devices. These longer wavelength devices are fabricated utilizing commercial scale deposition tools at RSL’s Nitride Research Center in Phoenix, Arizona. Silicon substrates have a substantial cost advantage over the more traditional sapphire or silicon carbide substrates typically utilized in LED fabrication, the company claims.
Efficient long wavelength LEDs are regarded as essential milestones in the roadmap for Solid State Lighting (SSL), LED backlighting and next generation display technology. Green or longer wavelength nitride based LEDs are very challenging to fabricate compared to UV and Blue LEDs due to decreasing quantum efficiencies and have remained a tough milestone for the LED industry.
The company based in Phoenix (USA) said it plans to eventually package the Green and longer wavelength LEDs through its sister company, FlipChip International (FCI). FCI also plans to provide a proprietary packaging solution for these LED devices.
RSL scientists have also demonstrated initial tunability of this technology to multi-color and white light spectrums. The device illustrates great promise due to its potential for high intensity, low energy consumption and a roadmap to a very low commercial cost. RSL believes this technology can be commercialized in 2-3 years with migration to 200 mm silicon substrates.
For more information, visit www.rosestreetlabs.com.
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