Verilog-A RF device models to help GaN adoption in 4G/LTE infrastructure
The device models support more complex circuit simulations including modulation envelope analysis for use in the latest innovative broadband and multi-mode RF power amplifiers for 4G cellular telecommunications.
“The release of this new suite of device models enables RF design engineers to predict non-linear performance using harmonic balance, conduct robust transient analysis as well as use “real-world” arbitrary modulation signals with envelope simulation for Cree’s GaN HEMT devices,” said Jim Milligan, director RF and microwave, Cree. “The Verilog-A models, together with envelope simulators, allow designers to directly investigate higher efficiency circuit approaches, such as Doherty amplifiers, to improve adjacent channel power ratios, spectral re-growth and error vector magnitude, while assessing if amplifier performance meets spectral mask requirements for LTE deployments. As these models also take advantage of multi-core processors, simulation times can be greatly reduced.”
“Transient analysis allows insight into switched-mode power amplifier configurations that may also be driven directly from digital signals,” said Ray Pengelly, RF business development manager, Cree. “Combined with such approaches as Chireix out-phasing, unprecedented efficiencies of greater than 70 percent have been demonstrated.”
The models are available free to Cree’s RF customers.
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