Vishay launches its first SiC MOSFET line at 1200V
Vishay Intertechnology has launched its first line of silicon carbide (SiC) MOSFETs, starting with a 1200V family and planning a 1700V version.
The Vishay MaxSiC 1200V SiC MOSFET have on-resistances of 55 mΩ, 95 mΩ, and 280 mΩ in standard packages for industrial applications, with custom products also available.
The SIC MOSFETs, based on the proprietary process acquired with MaxPower Semiconductor, are aimed at e-mobility, high efficiency power conversion, energy storage and grid management.
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Vishay is also providing a roadmap for 650 V to 1700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 1 Ω at the PCIM exhibition in Nuremberg, Germany, this week.
Vishay is showing demonstrations for a a high voltage intelligent battery shunt for 400 V and 800 V batteries as well as a 40 kW resettable electronic fuse (eFuse) for 400 V and 800 V battery electric vehicles (BEV).
It is also showing a unidirectional, 11 kW three-phase AC on-board charger (OBC) with a BOM consisting of 90% of Vishay parts, as well as a bidirectional 10 kW eFuse for 48 V applications.
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