Vishay releases 850 nm infrared emitters with SurfLight surface emitter technology
The VSMY7850X01 emitter contains a 42 mil chip and is designed for high drive currents up to 1 A and pulses to 5 A, while the VSMY7852X01 features a 20 mil chip for high drive currents up to 250 mA and pulses to 1.5 A. Due to the devices’ low thermal resistivity of 10 K/W for the VSMY7850X01 and 15 K/W for the VSMY7852X01, the maximum current can be employed over almost the entire operating temperature range of – 40 °C to + 100 °C.
Vishay’s SurfLight surface emitter technology uses a unique die construction in which all the light generated inside the semiconductor is emitted through the top surface of the chip. The result is ultra-high radiant intensity of 170 mW/sr and high optical power of 520 mW at 1 A with a low forward voltage of 2.0 V for the VSMY7850X01, and intensity of 42 mW/sr and optical power of 130 mW at 250 mA with a low forward voltage of 1.8 V for the VSMY7852X01. The devices released today are AEC-Q101 qualified and feature a ± 60° angle of half intensity.
With their extremely high current operation, the emitters can replace multiple standard SMD devices, allowing designers to reduce the component count and improve performance in a wide variety of applications. The VSMY7852X01 and VSMY7850X01 are optimized for IR illumination in CMOS cameras, driver assistance systems, 3D TV and 3D imaging, night vision, and IR flash applications. The emitters’ fast switching times of 15 ns make them ideal for machine vision IR data transmission.
The VSMY7852X01 and VSMY7850X01 complete the A850 series of SurfLight emitters which includes the VSMY3850, VSMY2850G, VSMY2850RG, VSMY1850X01, and the VSLY5850. All are built on surface-emitting technology, emit at 850 nm, and feature high intensity and optical power.
Samples and production quantities of the new VSMY7852X01 and VSMY7850X01 are available now, with lead times of 10 to 12 weeks for larger orders. Follow Vishay’s infrared emitters at https://twitter.com/vishayindust.