Wafer-level 12/30 V MOSFETs with market-leading efficiency

Wafer-level 12/30 V MOSFETs with market-leading efficiency

New Products |
By Jean-Pierre Joosting

Nexperia has introduced the PMCB60XN and PMCB60XNE 30-V N-channel small-signal trench MOSFETs, with market-leading RDS(on) in the ultra-compact wafer-level DSN1006 package, to make energy go further where space is tight and battery runtime is critical.

Ideal for highly miniaturized electronics like smartphones, smart watches, hearing aids, and earphones, the new MOSFETs support the trend towards greater intelligence and richer functionality that raise system power demand.

With RDS(on) up to 25% better than competing devices, they minimize energy losses and increase efficiency in load switching and battery management. Their superior performance also reduces self heating thereby enhancing user comfort in wearable devices.

Specifically, the PMCB60XN and PMCB60XNE have maximum RDS(on) of 50 mΩ and 55 mΩ respectively, at VGS of 4.5 V. This gives them the lowest on-resistance per die area among similar 30-V MOSFETs in the market. In addition, the PMCB60XNE comes with ESD protection rated to 2-kV (human body model – HBM) integrated in the tiny 1.0- × 0.6- × 0.2-mm DSN1006 outline. Both MOSFETs are rated for drain current up to 4 A.

In addition to these two MOSFETs in DSN1006, Nexperia has also introduced the PMCA14UN, a 12-V, N-channel trench MOSFET in a DSN1010 package. With maximum RDS(on) of 16 mΩ at VGS of 4.5 V, the PMCA14UN delivers market-leading efficiency in the 0.96- × 0.96- × 0.24-mm (SOT8007) outline.

The 30-V PMCB60XN and PMCB60XNE, and 12-V PMCA14UN, are in production now and available from Nexperia.

Nexperia’s extensive portfolio includes diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog and logic ICs.

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