Weebit Nano demonstrates first crossbar ReRAM arrays
Weebit Nano Limited in conjunction with its development partner CEA-Leti has demonstrated its first operational kilobit ReRAM crossbar arrays, a key milestone on its path to creating discrete (stand-alone) non-volatile memory (NVM) chips.
The 1T1R (one transistor one resistor) architecture used in embedded ReRAM arrays is not sufficient to support the large arrays of memory cells needed in discrete (stand-alone) memory chips. For this reason, the Weebit crossbar arrays were developed using a 1S1R (one selector one resistor) architecture that enables the high density needed for discrete chips. Such an architecture also allows the arrays to be stacked in 3D layers so they can deliver even higher densities.
1S1R crossbar ReRAM architecture has potential applications in storage class memory, persistent memory and as a NOR flash replacement. It is also ideal for AI architectures such as in-memory computing and neuromorphic computing.
Commenting on the latest technology development milestone, CEO Coby Hanoch said: “Weebit Nano continues to make significant technical and commercial progress within the embedded sector – recently successfully scaling our ReRAM technology down to 28 nm. Now, with the creation of our first kilobit crossbar arrays, we’re continuing our progress toward discrete memory.
Thanks to its simple structure, a ReRAM cell is small, fast, and easy to stack, and it consumes extremely low power. The key industry challenge in developing this technology to-date has been in choosing the appropriate resistive material that enables changes to its chemical or physical structure and is then able to restore that structure in a repeatable, low-variability and cost-effective manner.
Weebit’s ReRAM technology, developed with R&D partner CEA-Leti, overcomes these challenges and is designed with unique benefits that make it the best NVM in its class in terms of cost, performance and reliability.
Weebit recently filed several new patents together with CEA-Leti, designed to further protect its ReRAM intellectual property, with a focus on 1S1R architectures and selector cell programming.”
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