Weebit tapes out ReRAM on 22nm FDSOI process
As expected Weebit Nano Ltd. (Hod Hasharon, Israel) has taped out an 8Mbit resistive RAM (ReRAM) in a 22nm fully-depleted silicon-on-insulator (FDSOI) process.
The demo chip integrates the 8Mbit ReRAM array with control logic, decoders, IOs and error correcting code (ECC) and is in a node where flash memory is not available. As a test chip the device also includes a RISC-V processor core and peripherals. The arrival of the 8Mbit ReRAM was tipped by Eran Briman, vice president of marketing and business development, in October 2022 (see Weebit qualifies ReRAM for production on 130nm process).
Weebit has worked with CEA-Leti and CEA-List to scale its ReRAM down to 22nm.
Weebit declined to identify the foundry source of the 22nm FDSOI manufacturing process but it is likely to be Globalfoundries with its 22FDX process or possibly FDSOI from STMicroelectronics.
The company 8Mbit ReRAM is designed as an intellectual property block suitable for use in low power applications such as IoT and edge AI. The company states that as well being available on a node where flash is not the ReRAM has elevated tolerance of harsh environments.
These include high temperatures, radiation and electro-magnetic fields, making it suitable for applications such as IoT, medical, automotive and industrial.
“FDSOI technology provides high performance with low voltages and low leakage to enable devices to operate at higher frequencies with better energy efficiency. It also enables easier integration of additional features such as connectivity and security,” said Olivier Faynot, head of the silicon component division at CEA-Leti, in a statement issued by Weebit.
Related links and articles:
News articles:
Weebit qualifies ReRAM for production on 130nm process
Weebit tapes out ReRAM demo chip with SkyWater foundry
Weebit moves ReRAM on to ‘secret-sauce’ materials
Weebit Nano puts silicon-oxide ReRAM on 28nm FDSOI
Chinese ReRAM startup raises $100 million
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