Wide bandgap power semiconductor devices like Silicon Carbide (SiC) MOSFETs are enjoying growing popularity in many modern power electronic applications like E-mobility and renewable energy. Their extremely fast switching speed capability helps to increase efficiency and reduce the overall size and cost of the system. However, fast switching together with high operating voltages and increasing switching frequencies presents important challenges to the gate driver system. Rugged galvanic isolation, compliance with safety standards, control signal noise immunity and EMI performance are just some of the most important aspects to consider. An optimal design of the isolated auxiliary supply providing the voltage and current levels to drive a SiC/GaN device is described.
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