Enhancing Performance, Efficiency and Safety with SiC Isolated Gate Drivers
This white paper explores the crucial role of galvanically isolated (GI) gate drivers in optimizing SiC MOSFET performance for the evolving demands of electrified systems. As our world increasingly relies on electrical power in industry, transportation, and consumer goods, SiC has emerged as a solution for higher efficiency and reduced system size. This paper delves into the fundamentals of MOSFETs, gate drivers and GI gate drivers, emphasizing their role in efficient switching and cost avoidance. It provides a comprehensive selection guide, addressing considerations like isolation capability, capacitance, common mode transient immunity (CMTI), and current driving capabilities. The document concludes by spotlighting onsemi’s high−performance GI gate drivers, such as the NCV51152 and the NCV51752 that are designed for fast switching and integrated protection.
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