onsemi EliteSiC M3S Technology for High-Speed Switching Applications

onsemi EliteSiC M3S Technology for High-Speed Switching Applications

By onsemi

Silicon carbide (SiC) devices are becoming increasingly popular in power electronics due to their high efficiency and power density, which are critical factors for environmental and energy cost considerations.

SiC devices possess higher dielectric breakdown strength, energy bandgap, and thermal conductivity than silicon, allowing for the creation of more efficient and compact power converters [1]. Low RDS(on) and body diode reverse recovery charge values are crucial parameters for minimizing switching and conduction losses. SiC devices can switch faster and operate at higher frequencies than Silicon (Si) MOSFETs or IGBTs, resulting in space-saving, reduced heat dissipation, higher efficiencies, and lighter power converters. This article discusses onsemi’s current 1200V SiC MOSFET technology, known as M3S, developed specifically for high-speed switching applications, and compares it with similar parts from competitors under various conditions using characterization tests and simulations on a 3-phase Power Factor Correction (PFC) converter implemented with SiC MOSFETs.

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