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Overcoming the Challenges of Silicon Carbide to Ensure Application Success, attached

Overcoming the Challenges of Silicon Carbide to Ensure Application Success, attached

By onsemi



Introduction Silicon has traditionally been the cornerstone of semiconductor technology. However, silicon has its limitations especially in power electronics, where designers increasingly face new challenges. One way to address silicon’s limitations is with wide bandgap semiconductors. Bandgap = Energy required to move an electron from its’ outer shell, so it can move freely inside the material Wide Bandgap Semiconductors As the name implies, wide bandgap semiconductors such as silicon carbide (SiC) and Gallium Nitride (GaN) describe a class of semiconductors by their most important electrical property, their bandgap. Bandgap is the difference in energy between the top of the valence band and the bottom of the conduction band. Semiconductors like silicon have a relatively narrow bandgap in the range of 0.6-1.5 electronvolts (eV). (Figure 1)

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