UnitedSiC: Practical considerations when comparing SiC and GaN in power applications

By United Silicon Carbide Inc.
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Silicon carbide (SiC) and gallium nitride (GaN) semiconductor technologies are promising power semiconductor technologies. SiC devices in a cascode configuration enable existing systems to be upgraded to get the benefits of wide band-gap devices. The choice between SiC and GaN is not always straightforward, and the markets they can penetrate are perhaps wider than commonly supposed. Read More



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