When Planar is Superior to Trench: An In−Depth Look at the Continued Evolution of Silicon Carbide MOSFETs
Heightened demand for silicon carbide (SiC) power devices in the electric vehicle powertrain and energy infrastructure is accelerating market growth. Within that growth, elevated end user requirements and growing margin pressures have led organizations to consider SiC trench MOSFET technology in their power applications, in part because there is a prevailing assumption based on legacy silicon power devices that trench technology is the only way to get optimal power density. However, prior to deciding on whether trench is the appropriate technology today, it’s critical to consider the next−generation leap in SiC MOSFETs that will likely deliver benefits of trench without its inherent risks
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