Wideband GaN power amplifier optimized for 20 to 1000 MHz operation
This GaN on Silicon (Si) HEMT D-Mode Amplifier is suited for narrowband to broadband applications spanning test and measurement, defense communications, land mobile radio and wireless infrastructure.
The NPA1006 is designed for saturated and linear operation, featuring output levels up to 12.5 W (41 dBm). The power amplifier boasts 50 ohms input matched and output unmatched, 28 V operation and 14 dB gain. The device also provides customers with 65% drain efficiency at 900 MHz. Other specifications include saturated output power PSAT of 24, power added efficiency of 62 % and a drain voltage of 28 V.
The company says that it continues to shatter the barriers to mainstream GaN adoption by delivering superior technical performance products below LDMOS cost structures.
Gary Lopes, Senior Product Director, MACOM comments, “With our Gen 1 and Gen 2 products fully qualified and millions of units in the field, we are excited to continue leveraging our global design resources and deep GaN application experience to offer the industry the best performance, gain, efficiency and low cost products with our new Gen 4 technology.”
Production quantities and samples of the NPA1006 are available from stock.
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