Wideband GaN power transistor for CW, pulsed & linear operation to 100W
The NPT2022 supports CW, pulsed and linear operation, with output levels up to 100W or 50 dBm. This device provides customers 20 dB of gain and 60% drain efficiency at 900 MHz when operated at 50V. This HEMT D-Mode transistor is available in an industry standard plastic package with bolt down flange. The NPT2022 is suited for defence communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar. Macom adds, “The NPT2022 features advanced RF performance in a plastic package powered by MACOM’s unique GaN on silicon technology.”
|
Parameter |
Units |
NPT2022 |
|
Frequency |
GHz |
DC-2 |
|
Small Signal Gain |
dB |
21 |
|
Saturated Output Power |
dBm |
50.5 |
|
Power Gain |
dB |
20 |
|
Drain Efficiency |
% |
60 |
MACOM: www.macom.com
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