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WIN Semi announces mmWave GaN-on-SiC process

WIN Semi announces mmWave GaN-on-SiC process

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By Peter Clarke



WIN Semiconductors Corp. (Tao Yuan, Taiwan) has announced its NP12-0B platform to provide rugged mmWave RF GaN-on-SiC transistors.

The process provides moisture resistance to enable the use of plastic packages for power applications.

Core to the NP12-0B platform is a 120nm RF GaN HEMT process that is suitable for deep saturation/high compression pulsed and continuous wave conditions. The technology eliminates the pulse droop behavior observed in GaN HEMT power amplifiers thereby improving the range and sensitivity of pulsed mode radar systems, WIN said.

Supporting full MMICs, the NP12-0B platform allows customers to develop compact pulsed or CW saturated power amplifiers for applications at frequencies up to 50GHz. This process is qualified for 28V operation, and in the 29GHz band generates saturated output power of 4.5 watts/mm with 12dB linear gain and over 40 percent power added efficiency.

NP12-0B has reached beta release and is available for early access multiproject wafer runs. Qualification testing is complete and final modeling/PDK generation is expected to conclude in August 2024 with full production release scheduled for late 3Q24.

Related links and articles:

www.winfoundry.com

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