World’s first 700V and 1200V vertical GaN devices in production

World’s first 700V and 1200V vertical GaN devices in production

Business news |
By Nick Flaherty

NexGen Power Systems has started shipping engineering samples of the first 700V and 1200V vertical GaN devices for high power applications.

The 1200V Vertical GaN e-mode Fin-jFETs are the only wide-band-gap devices to have successfully demonstrated high frequency switching at a 1.4kV rated voltage. The devices are expected to begin full production in the third quarter of 2023.

The vertical transistor structure uses GaN on a GaN susbtrate rather than silicon used for planar devices.

“No other semiconductor device can match the performance characteristics that NexGen Vertical GaN offers, and we are incredibly proud to be the first company ever to deliver, from our facility in Syracuse, New York, production samples of 700V and 1200V devices using GaN-on-GaN technology,” said Shahin Sharifzadeh, CEO.

“NexGen’s semiconductors will allow our customers to develop power solutions that they have not been able to do with silicon, silicon carbide or GaN-on-Silicon technologies. While many have talked about it for decades, by the third quarter of this year, NexGen will deliver production quality Vertical GaN semiconductor devices operating at 1200V and switching frequencies of up to 10MHz, while able to withstand avalanche voltages of 1470V,” he said.

“As we move into full scale production after the significant manufacturing strides we made in the last year, we look forward to seeing our automotive, data centre, LED lighting and industrial customers deliver fundamental, market changing, improvements in the power efficiency and performance of their products,” he said.

NexGen is headquartered in Santa Clara, California and manufactures its NexGen Vertical GaN semiconductors at its facility in Syracuse, New York.


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