X-FAB adds eFlash to high-voltage 0.18 micrometer foundry offering

X-FAB adds eFlash to high-voltage 0.18 micrometer foundry offering

Technology News |
By eeNews Europe

This new solution results in a very cost-effective SoC platform. Supporting operating voltages up to 45V, and parallel integration of EEPROM, NVRAM and eFlash storage architectures, the new embedded on-chip memory solution is well suited for high-speed microcontroller, digital power and automotive applications.
Available in two different ready-to-use blocks 8K x 32-bit and 16K x 32-bit, the new XH018 eFlash solution is easy to integrate, offers fast access, and is more robust than external memory solutions. It includes optional error-correcting code (ECC) capability, allowing errors to be corrected on the fly. The new solution requires 1.8V and 3.3V operating voltage, and offers a fast 50ns access time independent of temperature, voltage and process changes within the entire operating range.
It also offers a very low current consumption of 200 microampere per MHz, and supports high-temperature read operation for junction temperature up to 175ºC.
The XH018 eFlash solution joins X-FAB’s existing embedded NVM offering, which currently includes both one-time programmable TrimOTP and non-volatile random-access memory NVRAM options. These include a compiler tool that enables designers to customize the memory blocks by configuring them according to their requirements.

The XH018 NVM design kit and Flash IP blocks can be licensed and are available now from X-FAB’s online technical information platform X-TIC. The EEPROM IP blocks will be available in the fourth quarter of 2011. The ready-to-use blocks currently are undergoing comprehensive testing as part of the qualification process. X-FAB plans to offer additional memory sizes and high-temperature characterization early next year.

Visit X-FAB at

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