X-fab boosts SiC foundry process
X-fab has enhanced its silicon carbide (SiC) process in Lubbock, Texas, for foundry customers.
The Belgian foundry has improved the capability of the lithography, deposition and etch tools and made major process flow changes from the previous generation for the XSICM03 next-generation XbloX platform.
This process reduces the cell pitch by 25%, boosting the number of die per wafer by 30% and reducing the on-state resistance for reduced losses without compromising the reliability of the gate oxide.
XbloX is X-Fab’s streamlined business process and technology platform for SiC MOSFETs, integrating qualified SiC process development blocks and modules for planar MOSFET production. The company is a key supplier of SiC technology for customers in the US.
Combining proven process modules with robust design rules, control plans, and FMEAs enables faster prototyping, easier design evaluation, and shorter time to market. This approach gives customers a competitive edge, allowing designers to create a diverse product portfolio while achieving production timelines up to nine months faster than traditional development methods.
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“With its streamlined approach, our next-generation process platform addresses the increasing demand for high-performance SiC devices in automotive, industrial, and energy applications. We enable existing and new customers in creating application-optimized product portfolios through accelerated prototyping and design evaluation, significantly reducing time to market,” said Rico Tillner, CEO of X-Fab Texas.
The Lubbock site was recently awarded $50m under the US Chips Act for expansion of the SiC capacity.
The XSICM03 platform is available for early access customers.
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