X-FAB targets IoT with low-power 180nm embedded Flash
Both X-FAB’s low power embedded Flash (eFlash) IP block and NVRAM compiler are based on the company’s proprietary 180nm XH018 mixed-signal CMOS technology and are targeted at applications requiring high reliability and field re-programmability while operating at low power. The 128-kbit eFlash comes as an 8 k x 16-bit IP block based on Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Flash technology. The IP block was specially designed for low power mixed-signal applications and features a deep power down stand-by mode consuming a maximum of only 50nA.
The new eFlash IP block is aimed at replacing standalone NVM memories and embedded One-Time-Programmable (OTP) memories in low power applications, enabling onsite program code updates. This means that it is highly suited to energy harvesting and remotely located Internet-of-Things (IoT) devices, where power constraints and harsh environments need to be dealt with, but field re-programmability must be offered at a low cost. The IP block complies with the AEC-Q100 standard, so that it offers engineers an automotive-grade solution capable of operating across a temperature range of -40 to 125°C. The SONOS technology enables reliable operation of the IP block when combined with high-voltage (HV) options ranging from 6 to 45 V. This is made possible by the NMOS, PMOS and DMOS transistors available with X-FAB’s 180 nm XH018 process. High field reliability is enabled with a number of test modes explicitly designed to test individual memory bit cell currents and achieve 0 PPM in the field. Finally, special test modes have been designed into the IP to optimize production testing and minimize test time and cost.
Combining the fast read/write speeds of a conventional SRAM with the non-volatility of an EEPROM, the NVRAM compiler facilitates generating and integrating memories from 1-kbits to 16-kbits in a wide range of applications requiring fail-safe memories.
The contents of the SRAM can be backed up to the EEPROM memory resource in the event of a power failure. This proves to be a highly desirable feature for safety-critical applications – such as smart meters, industrial control devices or data transfer systems. The NVRAMs can be re-programmed up to 100,000 times at 35°C and up to 10,000 times at 175°C. NVRAM blocks generated by the compiler can retain data for up to 20 years without battery power in high temperature environments (125 °C). Innovations in the test logic integrated with the NVRAM reduce the test time by avoiding time-consuming measurements for low currents, thereby reducing production test costs.
Both the eFlash IP block and the NVRAM compiler are available now.
X-FAB – www.xfab.com
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