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x8, x16, and x32 512Mb monolithic CMOS SDRAMs in 54-pin and 86-pin TSOP II

x8, x16, and x32 512Mb monolithic CMOS SDRAMs in 54-pin and 86-pin TSOP II

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By eeNews Europe



Featuring a LVTTL interface, the SDRAMs operate from a single +3.3-V (± 0.3 V) power supply, feature a power down mode to lower power consumption, and offer a data mask for read/write control. The devices feature fast clock rates to 133 MHz and are available in an industrial temperature range of -40 °C to +85 °C.

Fully synchronous with the positive clock edge, the AS4C64M8SC-7TIN, AS4C32M16SC-7TIN, and AS4C16M32SC-7TIN deliver faster performance than DRAMs in general-purpose computing, medical, industrial, point-of-sale, automotive, and telecom applications requiring high memory bandwidth. With minimal die shrinks, they can provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in these applications, eliminating the need for costly redesigns and part requalification.

The SDRAMs support sequential and interleave burst types with read or write burst lengths of 1, 2, 4, 8, or full page. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence.

Alliance Memory – www.alliancememory.com

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