1200V SiC Schottky diodes reduce power dissipation and equipment size

June 06, 2018 // By Nick Flaherty
Littelfuse has expanded its portfolio of silicon carbide (SiC) power semiconductor devices with the addition of five 1200 V, 3L TO-247 Schottky Diodes and three 1200 V, 2L TO-263 Schottky Diodes.

Compared with silicon devices, GEN2 SiC Schottky Diodes reduce switching losses and allow for substantial increases in the efficiency and robustness of power electronics systems in data centres, electric vehicle chargers and renewable energy systems. Operating at a higher junction temperatures than many alternatives means these designs require smaller heat sinks and enable a smaller system footprint

The 3L TO-247 GEN2 SiC Schottky Diodes are available with current ratings of 10 A, 15 A, 20 A, 30 A and 40 A. The 2L TO-263 GEN2 SiC Schottky Diodes are available with current ratings of 10 A, 15 A and 20 A. All have negligible reverse recovery current, accommodate high surge currents without thermal runaway, and operate at junction temperatures as high as 175 °C. 

The diodes were launched at PCIM 2018 in Nuremberg for Power Factor Correction (PFC), buck/boost stages in DC-DC converters, free-wheeling diodes in inverter stages (switch-mode power supplies, solar, UPS, industrial drives) and high-frequency output rectification as well as electric vehicle (EV) charging stations.

“These GEN2 SiC Schottky Diodes in 3L TO-247 and 2L TO-263 packages complement the 1200 V SiC MOSFETs and other GEN2 1200 V SiC Schottky Diodes already available from Littelfuse,” said Michael Ketterer, Global Product Marketing Manager, Power Semiconductors, Semiconductor Business Unit at Littelfuse. “We continue to strengthen our broad product portfolio, which, after the acquisition of IXYS, positions Littelfuse as a Tier 1 supplier for power semiconductor devices.”

The GEN2 Series SiC Schottky Diodes are available in TO-247-3L and TO-263-2L packaging in tubes in quantities of 450. Samples are available through distribution. 


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