40V, 1.2mΩ MOSFET in ultra-compact outline

November 15, 2017 // By Graham Prophet
Toshiba Electronics Europe has expanded its line-up of MOSFETs based on its latest generation U-MOS-IX-H trench semiconductor process with a new, ultra-compact 40V device featuring an integrated soft recovery diode (SRD), for low-EMI power supplies and motor drives.

The TPH1R204PB is an N-channel device with a maximum on resistance (RDS(ON)) of 1.2mΩ (at V GS = 10V). Rated output charge (Q OSS) is 56nC. The device is supplied in a SOP advance package measuring just 5 x 6 x 0.95 mm.


With its integrated SRD, the TPH1R204PB is able to keep the spike voltages generated between the drain and source during switching very low. This makes the MOSFET suitable for synchronous rectification in the secondary side of switching power supplies that require low EMI. Target applications include high-efficiency AC-DC and DC-DC converters as well as motor drives, for example in cordless tools.


Toshiba Electronics Europe; www.toshiba.semicon-storage.com





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