4Gb high-speed CMOS DDR4 SDRAMs operate at 1.2V

October 14, 2019 //By Julien Happich
DDR4 SDRAMs
Alliance Memory has expanded its product offering with a new line of high-speed CMOS DDR4 SDRAMs. For improved performance over previous-generation DDR3 devices, the 4Gb AS4C256M16D4 and AS4C512M8D4 offer lower power consumption and faster data transfer rates in 96-ball and 78-ball FBGA packages.

Compared to DDR3 SDRAMs, the devices released today reduce operating voltages from 1.5V to +1.2V (±0.06V) to increase battery life in portable electronics such as notebook computers, smartphones, and tablets. For increased efficiency and performance in desktop computers and servers, the 256Mb x 16-bit AS4C256M16D4 and 512M x 8-bit AS4C512M8D4 offer up to 16 memory banks and deliver faster clock speeds to 1333MHz for extremely high transfer rates of 2400Mbps/pin (1200MHz) and 2666Mbps/pin (1333MHz).

With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions. They are offered in extended commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges.

Alliance Memory - www.alliancememory.com


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