4Gb high-speed CMOS DDR4 SDRAMs operate at 1.2V
Compared to DDR3 SDRAMs, the devices released today reduce operating voltages from 1.5V to +1.2V (±0.06V) to increase battery life in portable electronics such as notebook computers, smartphones, and tablets. For increased efficiency and performance in desktop computers and servers, the 256Mb x 16-bit AS4C256M16D4 and 512M x 8-bit AS4C512M8D4 offer up to 16 memory banks and deliver faster clock speeds to 1333MHz for extremely high transfer rates of 2400Mbps/pin (1200MHz) and 2666Mbps/pin (1333MHz).
With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions. They are offered in extended commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges.
Alliance Memory – www.alliancememory.com
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