5nm nanosheet transistors cut power by 75%: Page 2 of 2

June 05, 2017 //By Nick Flaherty
5nm gate all around transistors developed by IBM and partners
Researchers at IBM have developed a practical way to build transistors on a 5nm process that provides a reduction in power consumption of up to 75% or a performance boost of 40% for the same power.
industry as we continue to push beyond the limitations of our current capabilities,” said Dr Bahgat Sammakia, Interim President of the SUNY Polytechnic Institute.

www.ibm.com/research


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