60V MOSFET increases efficiency and power density

August 12, 2019 //By Julien Happich
MOSFET
Designed Vishay Intertechnology has introduced a 60V TrenchFET Gen IV n-channel power MOSFET claimed to be the industry's first optimized for standard gate drives to deliver maximum on-resistance down to 4 mΩ at 10 V in the thermally enhanced 3.3x3.3mm PowerPAK 1212-8S package.

Designed to increase efficiency and power density in switching topologies, the Vishay Siliconix SiSS22DN features a low gate charge of 22.5 nC along with low output charge (QOSS).

Unlike logic-level 60 V devices, the typical VGS(th) and Miller plateau voltage of the SiSS22DN are enhanced for circuits with gate drive voltages above 6V, where the device provides optimized dynamic characteristics that enable short dead-times and prevent shoot-through in synchronous rectifier applications. The SiSS22DN's industry-low on-resistance is 4.8 % lower than the next best product and rivals the leading logic-level device, while its QOSS of 34.2 nC results in the best in class QOSS times on-resistance, claims the manufacturer. To achieve higher power density, the device utilizes 65 % less PCB space than similar solutions in 6x5mm packages. The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free. Samples and production quantities of the SiSS22DN are available now, with lead times of 30 weeks subject to market conditions.

Vishay Intertechnology - www.vishay.com


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