Today, interconnects have become the major bottleneck irrespective of the application domain due to electromigration issues and an ever increasing power consumption. The 3-year project will investigate ultra-fine CNT lines and metal-CNT composite material for addressing the issues of current state-of-the-art copper interconnects.
The partners aim to develop novel CNT interconnect architectures for the exploration of circuit- and architecture-level performance and energy efficiency. This may include embedding CNT channels within dielectric layers and direct CMOS integration for intra-chip power and data routing.
CNT interconnects are expected to significantly reduce electrical resistivity and electromigration, while improving current carrying capacity compared to state-of-the-art approaches using conventional copper interconnects.
Increased power and scaling density of CMOS or CMOS extension could also foster alternative computing schemes such as neuromorphic computing.