Carbon NanoTubes for SiP and on-chip interconnects

March 17, 2016 //By Julien Happich
Carbon NanoTubes for SiP and on-chip interconnects
Under the four million Euro Carbon Nanotube Composite Interconnects (CONNECT) European project, CEA, Fraunhofer IPMS, IBM, Aixtron, CNRS, GSS and University of Glasgow join forces to explore the fabrication techniques and processes that will enable reliable Carbon NanoTubes (CNTs) for on-chip interconnects in ULSI microchip production.

Today, interconnects have become the major bottleneck irrespective of the application domain due to electromigration issues and an ever increasing power consumption. The 3-year project will investigate ultra-fine CNT lines and metal-CNT composite material for addressing the issues of current state-of-the-art copper interconnects.

The partners aim to develop novel CNT interconnect architectures for the exploration of circuit- and architecture-level performance and energy efficiency. This may include embedding CNT channels within dielectric layers and direct CMOS integration for intra-chip power and data routing.

CNT interconnects are expected to significantly reduce electrical resistivity and electromigration, while improving current carrying capacity compared to state-of-the-art approaches using conventional copper interconnects.

Increased power and scaling density of CMOS or CMOS extension could also foster alternative computing schemes such as neuromorphic computing.


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