CMOS-compatible tensile-strained GeSn disk supports continuous lasing: Page 2 of 2

March 25, 2020 //By Julien Happich
GeSn disk
With the aim to move electronics into photonics with faster computing speeds, researchers computing to optical a team of physicists at the Centre de Nanosciences et de Nanotechnologies (C2N), in collaboration with researchers at Germany's Forschungszentrum Jülich (FZJ) and STMicroelectronics, have implemented a new material engineering method to fabricate a laser microdisk in a strained germanium-tin (GeSn) alloy compatible with CMOS processes.

With this device, the researchers observed laser emission in the alloy under continuous-wave (cw) excitation. The laser effect is reached both under continuous wave and pulsed excitations, at temperatures up to 70K and 100K, respectively. The fabricated lasers operated at a wavelength of 2.5μm with a thresholds of 0.8 kW cm−2 for nanosecond pulsed optical excitation and 1.1 kW cm−2 under continuous-wave optical excitation. These thresholds are two orders of magnitude lower than reported in the literature, the researchers highlight, opening a new path toward the integration of group IV laser on a Si-photonic platform.

Centre de Nanosciences et de Nanotechnologies -

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