GaN rising in high-power RF

July 26, 2016 //By Peter Clarke
GaN rising in high-power RF
Spending on high-power RF semiconductors for wireless infrastructure markets is flattening out in 2016 after being worth more than $1.5 billion in 2015, according to ABI Research.

Gallium nitride (GaN) is capturing market share in high-power RF semiconductors, especially in wireless infrastructure, the market research firm said.

"GaN is increasing its market share in 2016, and we believe it will be a significant force by 2021," said Lance Wilson, research director at ABI Research, in a statement. "This now mainstream technology bridges the gap between two older technologies, exhibiting the high-frequency performance of Gallium Arsenide and power handling capabilities of Silicon LDMOS."

Outside of wireless infrastructure defense-oriented market segments show the strongest opportunities for GaN.

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