of switching, trapping and de-trapping on the target programming algorithm is presented.
But not all the ferroelectric hafnium oxide papers are memory and paper 26.3 is entitled:
Energy harvesting in the back-end of line with CMOS-compatible ferroelectric hafnium oxide . The authors are from Fraunhofer IPMS Center Nanoelectronic Technologies, Globalfoundries Dresden and Technical University of Dresden. The conclusion is that HfO2-based ferroelectric materials are promising candidates for integrated energy harvesting.
This opens up the possibility of large-area – even wafer-scale – energy harvesters made economically using silicon manufacturing methods or integration on active chips with energy harvested and retained in the BEOL.
Intel is using the antiferroelectric properties of hafnium-zirconium oxide for their dielectric properties, to make superior capacitors for use with 3D embedded-DRAM. The embedded-DRAM requires operating voltage of less than 1.8V and offers retention of more than 1 millisecond with endurance cycling of 10^12 cycles at 80C.
A paper (9.2) from principle authors with Robert Bosch looks at FeFET for use in analog in-memory computing. A memory with crossbar design achieves a claimed record peak performance of 13,714 TOPS/W.
One of the last papers from the conference (paper 40.4) has the legendary Chenming Hu as the last-named author. Chenming Hu is widely regarded as the father of the FinFET revolution when he was CTO at TSMC in the early years of this millenium.
This is essentially an academic paper from the Taiwan Semiconductor Research Institute but it marks the creation of a gate-all-around CMOS and FeFET memory for near-computing computing.
The 66th IEDM is due to be held virtually from 12 to 16 December, due to the Covid-19 pandemic. Early registration end on November 20. Up until then non-members of the IEEE can register for access to the event at a reduced rate of US$330 rising to US$380 thereafter.
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