Ku-band GaN-HEMTs output 70W and 100W

December 12, 2019 //By Julien Happich
HEMTs
Mitsubishi Electric has developed new Ku-band (12-18GHz) 70W and 100W GaN high-electron-mobility transistors (GaN-HEMTs) suitable for multi-carrier applications.

The 70W-model GaN-HEMT achieves low third-order intermodulation distortion (IMD3) with a wide offset frequency of up to 400MHz, which is believed to be the industry’s highest level, while the 100W-model GaN HEMT combines unmatched power output with low IMD3 and an offset frequency of up to 200MHz. Mitsubishi Electric will begin shipping samples of both models on January 15. The MGFK48G3745A model uses a new matching circuit to deliver an industry-leading wide offset frequency, which is 80 times higher than that of current models, enabling large-capacity, high-speed satellite communications, including for multiple carriers. The MGFK50G3745A model uses optimized transistor matching circuits to deliver 100W peak output power and low IMD3 to help downsize SATCOM earth stations by reducing on-board components

Mitsubishi Electric - www.MitsubishiElectric.com


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