Low-power embedded flash enables energy harvesting

June 12, 2019 //By Julien Happich
flash memory
Renesas Electronics has developed new low-power technology for use in embedded flash memory based on its 65nm SOTB (Silicon On Thin Buried Oxide) process.

Available with 1.5 MB capacity, it is claimed to be the world’s first embedded 2T-MONOS (2 Transistors-Metal Oxide Nitride Oxide Silicon) flash memory based on 65nm SOTB technology.

With the addition of a new circuit technology that reduces the power consumption of the peripheral circuits on flash memory, Renesas achieves read energy as low as 0.22 picojoules per bit (pJ/bit) at an operating frequency of 64 MHz – among the world’s lowest levels for embedded flash memory on an MCU. The newly developed low-power technology for peripheral circuits comprises circuit technology that reduces energy consumption when sensing data in memory and reduces the amount of transmission energy consumed when read data is transmitted to an external destination. Together, these advances substantially reduce energy consumption when reading data from the memory.

The new SOTB-based technology has already been implemented in the Renesas R7F0E embedded controller intended specifically for energy harvesting applications.

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