Microchip releases high power SiC MOSFETs and Schottky barrier diodes

April 30, 2019 //By Julien Happich
Microchip releases high power SiC MOSFETs and Schottky barrier diodes
Microchip has announced, via its Microsemi subsidiary, the production release of a family of SiC power devices that offer proven ruggedness and the performance benefits of wide-bandgap technology.

Complemented by Microchip’s broad range of microcontrollers (MCUs) and analogue solutions, the SiC devices join a growing family of reliable SiC products meeting the efficiency, robustness and power density requirements of Electric Vehicles (EVs) and other high-power applications.

Microchip’s 700V SiC MOSFETs and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC power modules. The over 35 discrete products that have been added to Microchip’s portfolio are available in volume, supported by comprehensive development services, tools and reference designs, and offer outstanding ruggedness proven through rigorous testing. The broad family of SiC die, discretes and power modules are offered across a range of voltage, current ratings and package types.

Microchip’s SiC MOSFETs and SBDs offer more efficient switching at higher frequencies and pass ruggedness tests at levels considered critical for guaranteeing long-term reliability. The company’s SiC SBDs perform approximately 20 percent better than other SiC diodes in these Unclamped Inductive Switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions, which occur when a voltage spike exceeds the device’s breakdown voltage. The SiC MOSFETs are also said to outperform alternatives in these ruggedness tests, demonstrating excellent gate oxide shielding and channel integrity with little lifetime degradation in parameters even after 100,000 cycles of Repetitive UIS (RUIS) testing.

Microsemi - www.microsemi.com


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