"We were able to develop a structure where the undesirable free-carrier effects are suppressed," says Maxim Shcherbakov. "Free carriers (electrons and electron holes) place serious restrictions on the speed of signal conversion in the traditional integrated photonics. Our work represents an important step towards novel and efficient active photonic devices — transistors, logic units, and others. Features of the technology implemented in our work will allow its use in silicon photonics. In the nearest future, we are going to test such nanoparticles in integrated circuits".
"Device" is a disc 250 nm in diameter that is capable of switching optical pulses at femtosecond rates (femtosecond is a one millionth of one billionth of a second). Image courtesy of Maxim Scherbakov et al.
Breaking the terahertz barrier with graphene nanoelectronics
White lasers promise faster Li-Fi performance
First optical rectenna converts light to DC current
Spectrum of frequency comb light sources extended
Graphene converts light-to-electricity in under 50 femtoseconds