On its website, the company sees AlN as key to the epitaxial growth of low-defect AlGaN layers with high Al concentrations.
"Without the use of AlN, device manufacturers are relegated to building AlGaN-based devices on sub-optimal substrates such as sapphire or silicon carbide (SiC), and therefore are forced to implement exotic, and sometimes expensive fabrication techniques to compensate for the mismatch in materials", the company states.
By manufacturing devices directly on native AlN substrates, HexaTech claims its process allows devices with 10,000 to 1,000,000 fewer defects than the next best technologies.
The single crystalline AlN substrates are offered in c-plane and m-plane orientation. Last year, the company signed two strategic agreements with Osram Opto Semiconductors, committing to the long term supply of AlN substrates and the licensing of licensing of certain IP to the Regensburg-based company. Through licensing the IP, Osram aims to accelerate its UV-C LED device development.
HexaTech - www.hexatechinc.com