Plessey achieves native green microLEDs with 2D GaN-on-Si process

March 29, 2019 //By Julien Happich
Plessey achieves native green microLEDs with 2D GaN-on-Si process
Plessey announced it has developed a new manufacturing method for green microLEDs, using a proprietary 2D planar gallium nitride on silicon (GaN-on-Si) process.

Aimed at the AR and display markets, the green emitters do not rely on colour conversion techniques like it is typically the case for competing products where phosphors or quantum dot conversion materials are added to native Blue LEDs. These materials then convert short wavelength, typically 450nm, blue light to red or green wavelengths with an efficiency of around 10% to 30%.
Instead, without colour conversion losses, the native green emission is orders of magnitude brighter than colour converted microLEDs. With a dominant Green wavelength of 530nm and a full width half maximum wavelength of 31nm the green is well suited for colour displays and is said to exhibits outstanding wavelength stability versus current density.
Plessey fabricates the native green LEDs using a proprietary GaN-on-Si epitaxial growth process similar to the native blue LEDs, the principal difference being the amount of indium incorporated in the quantum well structures of the LED. 
“Plessey already provides powerful, efficient native blue microLEDs and through this innovation in our growth technology, Plessey has produced world leading high performance native green microLEDs which will provide for next generation display and illuminator devices for our customers.” said Mike Snaith, Chief Operating Officer at Plessey.
Plessey - www.plesseysemiconductors.com


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