Researchers integrate 2D-based single photon emitters with SiN waveguides

October 08, 2019 //By Julien Happich
single photon
Researchers from the Photonics Research Group, an imec research group at Ghent university and MIT announced that they have integrated single photon emitters in 2D layered materials with a Silicon Nitride photonic chip.

Even for moderate quantum yields, dielectric cavities could be designed such that the single photon extraction into the guided mode can reach unity. The results, published in Nature Communications under the title “Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip” provide a crucial step in fundamental quantum photonics and 2D materials research.

Photonic integrated circuits (PICs) enable the miniaturization of complex quantum optical circuits connecting large numbers of photonic devices with optimized insertion losses and phase stability. A central building block for such an integrated quantum circuit is a single photon emitter (SPE), and a variety of material systems have been investigated to create such on-chip SPEs. 2D-based SPEs have some unique properties that make them particularly appealing for integration with PICs.

Integrated WSe2 quantum emitters. (a) WSe2 flake is integrated on a 220 nm thick single mode SiN waveguide, separated by two air trenches from the bulk SiN. The waveguide ends are tapered to allow easier coupling with a lensed fibre. A fraction of the total emission couples into the left-propagating waveguide mode (represented by red shaded areas). (b) Cross-section of the sample. The width of the air trenches and waveguide is 3μm and 700 nm respectively. The generated PL of emitters near the waveguide couples both to free-space and to the waveguide.

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