The contract is worth more than 120 million dollars. It covers the supply of 150 mm silicon carbide wafers from SiCrystal to STMicroelectronics. The semiconductor manufacturer is experiencing growing demand for silicon carbide power semiconductors across the entire spectrum of electronic applications.
"This additional long-term supply agreement for SiC substrates complements the already secured external and internal capacities that we are building. ST can thus increase the volume and utilization of wafers needed to meet the high demand from customers for automotive and industrial programs in the coming years," said Jean-Marc Chery, President and CEO of STMicroelectronics.
"We will continue to support our partner in the expansion of the silicon carbide business by continuously increasing wafer volumes and delivering reliable quality at all times," said Robert Eckstein, President and CEO of SiCrystal.
The use of power supply solutions with SiC devices is currently accelerating in both the automotive and industrial sectors, the companies said.