The three companies are: Yangtze Memory Technology Co. Ltd. (YMTC) which is also known as Yangtze River Storage Technology (YRST), Hefei Chang Xin (Innotron Memory) and Fujian Jinhua Integrated Circuit Co. (JHICC).
YMTC, backed by Tsinghua Unigroup, is getting ready to enter the market with 3D-NAND flash (see China's Unigroup plans to spend $60 billion, says report) while Innotron and JHICC are preparing mobile DRAM and specialty DRAM respectively. All three companies have arranged trial production to begin in 2H18 and mass production to begin in 1H19. This will make 2019 the first year of China’s domestic memory chip production.
Innotron completed construction of its wafer fab in June 2017 with installation of equipment in 3Q17, TrendForce reports. And now both Innotron and JHICC have delayed trial production to 3Q18 with mass production due in 1H19, falling behind their announced schedule.
Innotron has chosen an LPDDR4 interface 8Gbit DRAM as its first product, which will put it in direct competition with established DRAM suppliers. This could put it a risk of law suits for patent infringement and to reduce that risk may decide to sell only in the Chinese market, TrendForce said.
Next: 550,000 wafer starts per month