Tower, Anatrix develop rad-hard RF ASIC

July 14, 2015 // By Peter Clarke
Tower, Anatrix develop rad-hard RF ASIC
Anatrix LLC, a provider of analog, RF and mixed-signal circuit blocks as intellectual property (IP), has developed an RF front-end and conversion ASIC that is radiation hard by design when implemented in a process from Tower Semiconductor's 0.18-micron silicon-germanium BiCMOS.

The process is the SBC18HA process that is run by an aerospace and defense business unit of foundry Tower at its wafer fab in Newport Beach, California. This is the site of the former Jazz Semiconductor that was acquired by Tower Semiconductor. Tower trades under the name TowerJazz.

The Anatrix design method can produce an optimized trade-off between total ionizing dose, single event effects, tolerance and cost and the ASIC offers exceptional RF phase detection along with RF control functions and has entered flight qualification procedure, Tower said.

"TowerJazz technology was critical to the success of this program; its SiGe BiCMOS process allowed Anatrix to achieve outstanding RF performance utilizing SiGe HBT devices while creating a cost effective solution for our space customer by incorporating CMOS based analog and digital control circuitry,” said Greg Pauls, president of Anatrix, in a statement issued by Tower.

Anatrix has an extensive silicon verified RadHard by design IP portfolio is currently extending its development into Tower's 130nm processes for deployment later in 2015.

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