800V superjunction MOSFETs lower on resistance
By using a super junction structure, the eight new MOSFETs of the DTMOS IV series see a 79% reduction in on-resistance per area (RON x A) compared to Toshiba’s previous π-MOSVIII series, ranging from 290mΩ in a TO220SIS package up to 950mΩ in a standard TO220.
The improved switching speed can also contribute to the efficiency of the power supply designs.
The MOSFETs are suited for use in industrial power supplies, standby power supply for servers, adaptors and chargers of notebook PCs and mobile devices, and in power supplies for LED lighting. Pats are available now.
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Main Specifications of the MOSFETs: |
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(@Ta=25°C) |
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Part |
Package |
Absolute Maximum |
RDS(ON) |
Qg typ. |
Cisstyp. |
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VDSS |
ID |
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| TK17A80W | TO-220SIS | 800 | 17 | 0.29 | 32 | 2050[1] | ||||||
| TK12A80W | TO-220SIS | 800 | 11.5 | 0.45 | 23 | 1400 | ||||||
| TK10A80W | TO-220SIS | 800 | 9.5 | 0.55 | 19 | 1150 | ||||||
| TK7A80W | TO-220SIS | 800 | 6.5 | 0.95 | 13 | 700 | ||||||
| TK17E80W | TO-220 | 800 | 17 | 0.29 | 32 | 2050[1] | ||||||
| TK12E80W | TO-220 | 800 | 11.5 | 0.45 | 23 | 1400 | ||||||
| TK10E80W | TO-220 | 800 | 9.5 | 0.55 | 19 | 1150 | ||||||
| TK7E80W | TO-220 | 800 | 6.5 | 0.95 | 13 | 700 | ||||||
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[1] Measurement condition f=100 kHz |
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For more information see toshiba.semicon-storage.com/ap-en/product/mosfet/hv-mosfet.html
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