Cambridge GaN Devices (CGD) has signed a three way deal for switched mode power adapters and data centre power supplies using its integrated GaN devices.
The tripartite agreement with CGD, Chicony Power Technology in Taiwan and Cambridge University Technical Services (CUTS) in the UK will develop advanced, efficient, high power-density SMPS (switch mode power supplies) adapters and data centre power systems using GaN.
Chicony Power is a well-established provider of power electronics systems focusing on power supplies and adapters for various applications, including notebooks, desktop computers, gaming devices, and server/cloud solutions.
Prof. Florin Udrea, CTO of CGD and head of the High Voltage Microelectronics and Sensor (HVMS) group at Cambridge University will act as the lead consultant on behalf of CUTS. The HVMS group at Cambridge University has a history of 25 years in power device design, TCAD simulations and characterisation of power devices.
- Cambridge GaN Devices adds 2D bar codes for power die
- Cambridge GaN Devices launches its first integrated parts
- Cambridge GaN Devices secures funding to scale mass production
CGD has historic and ongoing links with Cambridge University via CEO, Giorgia Longobardi, and Udrea who also still leads the HVMS group.
“Chicony Power is one of the leading SMPS manufacturers in the world, so this agreement represents an incredible milestone in CGD’s journey to deliver an efficient power device technology both to our customers and to society in general,” said Longobardi. “The combined strengths of our businesses together with the world-renowned HVMS group at Cambridge University will accelerate the development and adoption of high energy-density power solutions in wide ranging applications.”
The three way project is expected to deliver SMPS prototypes for highly efficient, high-density adapters for notebooks with power density over 100W/inch3 for CRPS supplies and an OCP power shelf unit at 3kW to 6kW for data centres and AI server applications.
Chicony Power intends to collaborate with CGD and HVMS because of their significant expertise in GaN. CGD has already delivered its second series of ICeGaN HEMT devices which offer top-notch performance in terms of ruggedness and ease-of-use. And because of its roots and still strong links with Cambridge University, CGD can call upon 25 years of academic experience – more than many other established GaN companies,” said Peter Tseng, president of Chicony.
Recently, CGD launched the second series of its ICeGaN 650 V gallium nitride HEMT family. H2 Series ICeGaN HEMTs employ CGD’s smart gate interface that virtually eliminates typical e-mode GaN weaknesses, delivering significantly improved overvoltage robustness, higher noise-immune threshold, dV/dt suppression and ESD protection.
Like previous-generation devices, the new 650 V H2 ICeGaN transistors are simple to drive using commercially available industry gate drivers. Finally, H2 ICeGaN HEMTs feature a QG that is 10x lower than silicon parts and a QOSS that is 5x less. This greatly reduces switching losses, with corresponding reductions in size and weight.