Infineon Technologies has developed the industry’s first radiation-hardened serial interface Ferroelectric RAM (FRAM) for space applications.
The FRAM memories have higher reliability and data retention and are more energy efficient than non-volatile EEPROM and serial NOR Flash devices for equipment used in orbit.
The 2Mbit QML-V qualified FRAM has no wear leveling, with 10 trillion read/write cycles and 120 years data retention at 85°C, at an operating voltage range of 2.0 V to 3.6 V. The lowest operating current is 10 mA maximum, with an extreme low programming voltage of 2 V.
The SPI serial interface allows it to be used as a direct replacement for serial NOR flash and EEPROMs for data logging of mission critical data, telemetry storage, and command and control calibration data storage. The new device is also suitable for providing boot code storage solutions for microcontrollers, FPGAs and ASICs.
Support for the industry standard Serial Peripheral Interface (SPI) protocol improves ease-of-use and supports a smaller footprint and lower pin count. Serial protocols are increasingly used in satellite and space applications, with multiple suppliers now offering SPI capable space-grade processors, FPGAs and ASICs.
“As a recognized leader in high-reliability solutions for space applications, both through our IR HiRel business and in space-grade memories, Infineon is committed to delivering the most reliable, energy efficient memories for next-generation space applications,” said Helmut Puchner, Vice President Fellow of Aerospace and Defense at Infineon Technologies. “The newly introduced rad hard F-RAM devices have superior write capabilities with lower power requirements than alternatives, and support system designs with fewer components, improved performance and no compromise in reliability. We look forward to bringing more industry-firsts to the space market.”
The 2 Mb density FRAM with SPI is the first in its family of rad hard non-volatile F-RAMs. The devices are also suitable for avionic and other applications that require military standard temperature grades reaching from -55°C to 125°C. Additional features include a small footprint with 16-in ceramic SOP packaging. The DLAM QML-V qualified devices have a radiation performance of TID: >150 Krad (Si) and SEL >114 MeV·cm 2/mg @115°C
The 2 Mb rad hard, non-volatile serial interface FRAMs are available now.
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